? 2010 ixys corporation, all rights reserved linear tm power mosfet w/ extended fbsoa n-channel enhancement mode avalanche rated v dss = 1000v i d25 = 12a r ds(on) 1.3 ds99126b(04/10) features ? international standard package ? designed for linear operation ? avalanche rated ? molding epoxy meets ul94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? programmable loads ? current regulators ? dc-dc converters ? battery chargers ? dc choppers ? temperature and lighting controls IXTH12N100L symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 3.5 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 500 a r ds(on) v gs = 20v, i d = 0.5 ? i dss , note 1 1.3 g = gate d = drain s = source tab = drain to-247 g s tab d symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 12 a i dm t c = 25 c, pulse width limited by t jm 25 a i a t c = 25 c 12 a e as t c = 25 c 1.5 j p d t c = 25 c 400 w t j -55...+150 c t jm 150 c t stg -55...+150 c t l 1.6mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g
ixys reserves the right to change limits, test conditions, and dimensions. IXTH12N100L ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i dss , note 1 3.0 5.0 s c iss 2500 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 300 pf c rss 95 pf t d(on) 30 ns t r 55 ns t d(off) 110 ns t f 65 ns q g(on) 155 nc q gs v gs = 20v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss 35 nc q gd 55 nc r thjc 0.31 c/w r thcs 0.21 c/w safe-operating-area specification symbol test conditions characteristic values min. typ. max. soa v ds = 800v, i d = 0.25a, t c = 60 c 200 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 12 a i sm repetitive, pulse width limited by t jm 48 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 1000 ns resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss r g = 4.7 (external) i f = i s , -di/dt = 100a/ s, v r = 100v, v gs = 0v e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2010 ixys corporation, all rights reserved IXTH12N100L fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes v gs = 20v 12v 10v 7 v 8 v 6 v 9 v fig. 2. extended output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 12v 9 v 8 v 7 v 6 v 10 v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 20v 10v 9 v 7v 8v 6v 5v fig. 4. r ds(on) normalized to i d = 6a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 20v i d = 12a i d = 6a fig. 5. r ds(on) normalized to i d = 6a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 2 4 6 8 101214161820 i d - amperes r ds(on) - normalized v gs = 20v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTH12N100L fig. 7. input admittance 0 2 4 6 8 10 12 14 16 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 10 0246810121416 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 4 8 12 16 20 24 28 32 36 0.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 18 20 0 20406080100120140160 q g - nanocoulombs v gs - volts v ds = 500v i d = 6a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - oc / w
? 2010 ixys corporation, all rights reserved ixys ref: t_12n100l(7n)4-19-10-a IXTH12N100L fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc fig. 14. forward-bias safe operating area @ t c = 60oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 60oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc
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